The BSM120D12P2C005 is a half bridge power module consisting of SiC-DMOSFETs and SiC-SBDs from ROHM. With a drain-source voltage of 1200 V and drain current of 120 A, the device has a maximum total ...
Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
The CAS300M17BM2 is the industry’s first all-SiC 1.7-kV power module that is available in an industry standard 62-mm housing. The half-bridge module exhibits an 8 mΩ on-resistance and is capable of ...
OSLO, Norway--(BUSINESS WIRE)--SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) technology for high-power, high-efficiency, harsh-environment power management and ...
Cree, Inc. released the industry's first all-SiC 1.7kV power module in an industry standard 62mm housing. Dec. 2, 2014 Cree, Inc. released the industry's first all-SiC 1.7 kV power module in an ...
Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
Power Integrations launched a family of ASIL B-qualified, dual-channel, plug-and-play gate-driver boards for both SiC MOSFETs and silicon IGBTs. At PCIM Europe, Power Integrations announced the SCALE ...
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