Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

Figure 1. Illustrations of the ultra-low power phase change memory device developed through this study and the comparison of power consumption by the newly developed phase change memory device ...

Organic transistor memory devices integrate organic semiconducting materials with field‐effect transistor architectures to achieve nonvolatile data storage. These devices harness charge trapping ...

A team of researchers has proposed a new concept for magnet-based memory devices, which might revolutionize information storage devices owing to their potential for large-scale integration, ...

Neuromorphic computing aims to replicate the functional architecture of the human brain by integrating electronic components that mimic synaptic and neuronal behaviours. Central to this endeavour are ...

Forbes contributors publish independent expert analyses and insights. This is my third and last blog on digital storage and memory projections for 2024. The last two articles focused on digital ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

The CDC reports that more than 16 million people are living with Cognitive Impairment. The CDC (2017) defines Cognitive impairment as difficulty with remembering, learning new things, concentrating, ...