Business Wire

Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
Electronic Design

2,300-V SiC Power Module Raises the Bar for Renewable Energy

Wolfspeed is bringing the power-handling properties of silicon carbide (SiC) to the renewable energy, energy storage, and high-capacity EV fast-charging sectors with its new family of 2,300-V power ...
Electronic Design

SiC Transistor Basics: FAQs

Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially ...
EDN

Modeling and Validating MV SiC Power Modules

It shows the response of the device to stimulus in mathematical manner with little or no consideration for the underlying device physics. Semi-physics model describes the semiconductor physics and it ...